Audio Database
ST-5066
Commentary

An FM/AM tuner that is strong in strong electric fields and capable of receiving weak radio waves.

The front-end high-frequency amplifier circuit uses a junction FET with a special structure to suppress noise and improve S/N because of its low noise and high amplification.
In addition, stable local oscillation circuit and mixer circuit using FET are mounted.

Two solid state filters of 2-element 1-package type are used for the IF part, and it is designed with high accuracy and no adjustment deviation.

The MPX circuit is equipped with three transistors and peripheral coils are also unitized to reduce the number of parts and improve reliability.
In addition, by making it a sealed unit without adjustment, the influence of heat and moisture is suppressed and aging is suppressed.

The AM section has an independent circuit configuration, and by adopting a high-selectivity triple-tune IFT, reception with high sensitivity and less spurious beats is possible.

Model Rating
Type FM/AM Tuner
Circuit system Superheterodyne system
FM Tuner Section
Antenna terminal 300 Ω Balanced Type
75 Ω Unbalanced Type
Receiving frequency 75 mhz to 90 mhz
Intermediate frequency 10.7MHz
Practical sensitivity 2.2 μ V (IHF)
Sensitivity 1.7 μ V (S/N = 30 db)
Signal-to-noise ratio 68dB
Capture ratio 1.5dB
Selectivity 55dB(IHF)
Image interference ratio 45dB
IF interference ratio 95dB
Spurious interference ratio 75dB
AM suppression ratio 45dB(IHF)
Frequency characteristic 30 Hz to 15 kHz, + 1-3 dB
Distortion factor Mono : 0.5% at 400 Hz with 100% modulation
Stereo : 0.8% at 400 Hz, 100% modulation
FM stereo separation 35 dB or More (400 Hz)
Output Voltage / Impedance
(400 Hz at 100% modulation)
High : 1.5V/3.3k Ω
Normal : 0.75V/4.5k Ω
<AM Tuner Section>
Antenna Ferrite bar antenna
With External Antenna Terminal
Receiving frequency 530 kHz to 1,605 kHz
Intermediate frequency 455kHz
Sensitivity 48dB/m (when bar antenna is used)
100 μ V (when external antenna is used)
Signal-to-noise ratio 50dB(50mV/m)
Image interference ratio 45dB(1,000kHz)
IF interference ratio 40dB(1,000kHz)
Distortion factor 0.6%
<General>
Semiconductor used Transistor : 20 (17 receiving circuits, 3 attached circuits)
FET:2
Diode : 14
Pwer 100 VAC, 50Hz/60Hz
Power consumption 18W
External dimensions Width 416x Height 120x Depth 284 mm
Weight 4.8kg