SONY TA-FA50ES
¥ 98,000 (released in 1997)
Commentary
A pre-main amplifier that adds smoothness and warmth to sound with all-stage MOS-FET structure, new torus, toroidal transformer, etc.
MOS-FET with excellent acoustic characteristics is adopted in all stages.
Especially for the final stage, non-magnetic base and non-magnetic plating are used.
It is equipped with a fixed optical bias circuit, and the temperature detection and compensation of the heat sink are abolished and the operation of the output stage is stabilized by using a fixed bias circuit.
The power supply section is equipped with an improved torus and toroidal transformer.
In this transformer, the primary winding (AC100V side), which used to be wound on the outside, is changed to the inside and the secondary winding is changed to the outside, so that the noise contained in the AC100V line is enclosed and noise is prevented from being radiated into the chassis.
The power supply circuit uses an advanced S. T. D. power supply.
By increasing the size of the small transformer and changing the specifications of the large-capacity electrolytic capacitor, the power supply capability of the voltage amplifier stage (A-class stage) and the power amplifier stage (power stage) has been enhanced, resulting in improved sound quality in the middle and high frequency range and improved SN ratio and dynamic range.
A pure input circuit is used, and the number of contacts is greatly reduced to allow for weak audio signals.
The internal layout uses twin monaural construction. The power supply is placed in the center and the power amplifier and heat sink are arranged almost symmetrically to obtain good channel separation with less crosstalk.
In addition, the inside of the chassis is composed of five blocks and each circuit part is separated to reduce mutual interference in terms of electromagnetic and vibration.
A FB chassis is used for the chassis.
An eccentric insulator is used for the legs.
Equipped with tone control with turnover frequency switching function.
Equipped with phono input circuit corresponding to MM/MC cartridge.
A source direct switch is installed and the tone control circuit and balance control circuit can be bypassed if they are not required.
Built-in pre-out terminal.
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・ Product internal layout (left) and prototype model layout (right)
In the February 1997 catalog, the internal layout and rear panel of the prototype model were shown instead of the finished product. It seems that there was a change just before the release. If you take a closer look, there are changes in the details, as far as I checked.
・ Speaker terminal and ground terminal were changed from gold-plated terminal.
・ The capacitor used on the top of the substrate on the back side has been changed from Elner Silmic to Elner For Audio.
・ The heatsink on the board behind the left heatsink has been changed.
・ It is omitted that the final-stage power MOS-FET was fixed by sandwiching it between aluminum plates.
- Addition of black reinforcing plates at the four corners of the frame.
It seems to have been changed.
Model Rating
| Type | Pre-main amplifier | ||
| Effective output (20 Hz to 20 kHz) | 110W + 110W (4 Ω) 90W + 90W (6 Ω) 80W + 80W (8 Ω) |
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| Input Sensitivity / Impedance | Phono MM : 2.5mV/50k Ω Phono MC : 170 μ V/100 Ω Line : 150mV/50k Ω |
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| Output Level / Impedance | Rec out : 150mV/1k Ω Headphone : 25 mW (8 Ω) |
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| Total harmonic distortion factor | 0.008% (8 Ω at 10W output) | ||
| Intermodulation distortion factor (60 hz : 7 khz = 4 : 1) | 0.008% (8 Ω at rated output) | ||
| Frequency characteristic | Phono MM : 20 Hz to 20 kHz ± 0.2 dB Line : 2 Hz to 100 kHz + 0 -3dB |
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| Signal-to-noise ratio | Phono MM:87dB Phono MC:76dB Line:105dB |
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| Tone control |
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| Accessory function | Source direct switch Rec out off Rec Out Selector Turnover switching function |
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| Pwer | 100 VAC, 50Hz/60Hz | ||
| Power consumption | 225W | ||
| External dimensions | Width 430x Height 175x Depth 450 mm | ||
| Weight | Approx. 20.5 kg |