SONY TA-F510R

Commentary

A pre-main amplifier incorporating technology developed in the New ES amplifier.

A MOS FET is used in the final stage of the amplifier circuit. Since the input impedance of the MOS FET is high, the driver stage and the output stage can be electrically separated to reduce interference with each other. Thus, high sound quality can be obtained with a relatively simple circuit structure, and odd-order distortion, which is easy to hear, can be suppressed.
In addition, an optical bias circuit is used for the voltage amplification stage (A-class stage) to suppress the change of idling current, thereby realizing stable amplification of audio noise.

We have adopted a newly developed torus toroidal transformer for the transformer of the power supply section. In this transformer, the core section of the conventional toroidal transformer is made into an oval shape to improve the adhesion of the coil. This improves efficiency, greatly reduces vibration, and reduces the influence on the audio signal. In addition, since the total length of the coil is shortened, impedance is lowered.

Advanced S. T. D. (Spontaneous Twin Drive) power supply is used for the power supply part.
In the conventional S. T. D. power supply, the voltage amplifier stage (A class stage) and the power amplifier stage (B class stage) are separately and independently supplied with power from the rectifier circuit. Thus, the change in the power supply voltage of the power amplifier stage does not adversely affect the power supply of the voltage amplifier stage even at high output, and the sound quality is improved.
The Advanced S. T. D. power supply is a further development of this system. An induction coil is added to the voltage amplification stage to reduce voltage fluctuations during rectification. A large-capacity capacitor is also equipped to supply a large instantaneous current, thereby improving sound quality in the middle and high frequency range, S / N ratio and dynamic range.

The heat sink employs a radial heat sink in which fins are concentrated at the base of the transistor. This reduces the transmission of mid-to-high frequency resonance, which greatly affects sound quality, to the transistor.

Wireless remote control is included.

Model Rating

Type	Pre-main amplifier
Effective power (EIAJ)	90W + 90W (4 Ω)
Input Sensitivity / Impedance	Phono MM : 2.5mV/50k Ω Line system : 150mV/20k Ω
Output Level / Impedance	Rec out : 150mV/1k Ω Headset : 10 mW (8 Ω)
Total harmonic distortion factor	0.01% or Less (8 Ω at 10W output)
Intermodulation distortion factor (60 hz : 7 khz = 4 : 1)	0.03% (8 Ω at rated output)
Frequency characteristic	Phono MM : 20 Hz to 20 kHz ± 0.5 dB Line system : 7 Hz to 100 kHz + 0 -3dB
Signal-to-noise ratio	Phono MM:80dB Line system : 105 dB
Tone control	Bass : ± 7 dB (100 Hz) Treble : ± 7 dB (10 kHz)
Accessory function	Source direct switch Tape monitor Loudness Remote Commander
Pwer	100 VAC, 50Hz/60Hz
Power consumption	130W
External dimensions	Width 430x Height 135x Depth 315 mm
Weight	Approx. 5.6 kg
Attachment	Wireless Remote Control RM-S312