SONY TA-F222ESJ
¥ 49,800 (released in 1993)
Commentary
ES series pre-main amplifier that uses power MOS FET.
A newly developed non-magnetic power MOS FET (Metal Oxide Semiconductor FET) exclusively for audio is used as the output stage device. Power MOS FET is a MOS FET originally developed as a small-signal switching device that enables high-power amplification while maintaining excellent high-frequency characteristics and switching speed.
Since this element has high input impedance, the load on the driver stage is small, and high sound quality can be obtained with a relatively simple circuit structure. In addition, since it has a transfer function of square characteristic, distortion is mainly of even order, and there is little adverse effect on sound quality. Since it is a voltage control element with insulated gate, the driver stage and output stage can be electrically separated, and mutual interference can be eliminated.
The chassis structure uses a G-chassis designed with no vibration or resonance.
The G chassis is made by adding calcium carbonate, the main component of marble, to unsaturated polyester and reinforcing it with glass fiber. While it has high strength, it has high internal loss and excellent vibration damping characteristics. This suppresses external vibration and internal vibration generated in the power supply section, etc. and greatly reduces the generation of modulation noise caused by vibration and resonance. Also, since the G chassis is non-magnetic and non-metal, it does not generate electro-striction and eddy current which are induced from power transformer and condenser, etc. and has an advantage in sound quality.
To mount each part on the G chassis, the audio circuit board and power transformer are directly mounted and fixed, and the front panel, terminal panel and case are fixed on the G chassis with a connecting angle.
The heat sink uses a double-sided fin type aluminum die cast.
The power supply section is equipped with a Spontaneous Twin Drive (S. T. D.) power supply that supplies the A-class stage for voltage amplification and the B-class stage (output stage) for power amplification of the input signal of the power amplifier section separately and independently from the rectifier circuit. Thus, the power supply of the A-class stage does not shake even at high output, enabling stable power supply at all times.
The S. L. L. (Super Legato Linear) method is used in the output stage to reduce switching distortion and crossover distortion, and to further reduce distortion at the reproduction level in actual use.
Built-in phono equalizer amplifier.
It uses a source direct switch that bypasses tone control and mode switching.
It also has a direct-in terminal that bypasses the input selector.
Equipped with an adapter input / output terminal that is useful for connecting surround processors, etc.
Equipped with an ES filter to prevent noise from the AC line.
Gold plated pin jack terminal is used for CD and Phono inputs.
Equipped with a subsonic filter.
.JPG)
Model Rating
| Type | Pre-main amplifier |
| Effective output (20 Hz to 20 kHz) | 100W + 100W (4 Ω) 90W + 90W (6 Ω) 80W + 80W (8 Ω) |
| Harmonic distortion factor | 0.008% (8 Ω at 10W output) |
| Cross modulation distortion factor | 0.004% (at rated output, 8 Ω, 60 hz : 7 khz = 4 : 1) |
| Frequency characteristic | Phono MM : 20 Hz to 20 kHz ± 0.2 dB Line system : 2 Hz ~ 200 kHz + 0 -3dB |
| Signal-to-noise ratio (A network) | Phono MM:87dB Phono MC:68dB Line system : 105 dB |
| Input Sensitivity / Impedance | Phono MM : 2.5mV/50k Ω Phono MC : 170 μ V/100 Ω Line system : 150mV/50k Ω |
| Output Level / Impedance | Rec out : 150mV/1k Ω Headphone : 25mW/8 Ω |
| Tone control | Bass : ± 7 dB (100 Hz) Treble : ± 6 dB at 10 kHz |
| Pwer | 100 VAC, 50Hz/60Hz |
| Power consumption | 210W |
| External dimensions | Width 430x Height 150x Depth 375 mm |
| Weight | 14.0kg |