SONY TA-F222ESA
¥ 49,800 (released in 1991)
Commentary
A pre-main amplifier developed by inheriting the design philosophy of the ES amplifier.
In order to pursue a vibration-free and resonance-free design, we have adopted a G-chassis structure.
The G chassis is made of unsaturated polyester with calcium carbonate, the main component of marble, and reinforced with glass fiber. Compared with metal, this material has higher internal loss and superior vibration damping characteristics. Moreover, it has higher strength and can be processed with high precision. The G chassis is made by molding this material into a shape that is acoustically examined, and realizes a strong chassis structure.
In addition, because of its non-magnetic and non-metallic nature, it does not generate electro-striction or eddy current induced by magnetic fields of transformers and condensers, and has succeeded in reducing sound quality degradation.
The ES amplifier uses a G-chassis base structure that makes each part more rigid when mounted. Main parts such as printed circuit boards for audio circuits and power transformers are attached directly to the G-chassis and firmly fixed. In addition, the front chassis, terminal panel and case are attached at important points above the G-chassis so as to reinforce each other with connecting angles. This realizes a strong chassis structure and reduces sound quality degradation due to unnecessary vibration.
The heat sink uses a double-sided fin type made of aluminum die-cast.
S. T. D. power supply (Spontaneous Twin Drive) is used for the power supply part.
In this power supply circuit, the rectifying circuit to the power amplifier section is separated into the A-class stage and the power stage. By suppressing interference between the A-class stage and the power stage, sound quality is improved.
It employs a direct link system that greatly shortens the signal path.
Equipped with an ES filter to prevent noise from the AC line.
The S. L. L. (Super Legato Linear) legato linear) method, which greatly reduces the switching distortion and crossover distortion of the output stage over a wide bandwidth.
An equalizer amplifier using a low-noise FET is mounted.
It is equipped with a source direct switch that bypasses the tone control circuit and allows direct input without passing through unnecessary circuits.
It is also equipped with a direct IN connector that allows connection via the shortest path without using an input selector.
Equipped with a Rec out selector that allows you to select your own recording source regardless of the source being played.
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Model Rating
| Type | Pre-main amplifier |
| Effective output (20 Hz to 20 kHz) | 120W + 120W (4 Ω) 100W + 100W (6 Ω) 90W + 90W (8 Ω) |
| Output bandwidth | 10 Hz to 80 kHz (45W output, 0.02% harmonic distortion factor, 8 Ω) |
| Harmonic distortion factor | 0.003% (8 Ω at 10W output) |
| Cross modulation distortion factor | 0.004% (at rated output, 8 Ω, 60 hz : 7 khz = 4 : 1) |
| Frequency characteristic | Phono MM : RIAA curve ± 0.2 dB Line system : 2 Hz ~ 200 kHz + 0 -3dB |
| Signal-to-noise ratio | Phono MM:95dB Phono MC:68dB Line system : 105 dB |
| Input Sensitivity / Impedance | Phono MM : 2.5mV/50k Ω Phono MC : 170 μ V/100 Ω Line system : 150mV/20k Ω |
| Output Level / Impedance | Rec out : 150mV/1k Ω Headphone : 25mW/8 Ω |
| Tone control | Bass : ± 7 dB (100 Hz) Treble : ± 6 dB at 10 kHz |
| Suitable speaker impedance | 4 Ω ~ 16 Ω |
| Pwer | 100 VAC, 50Hz/60Hz |
| Power consumption | 215W |
| External dimensions | Width 430x Height 150x Depth 375 mm |
| Weight | 14.0kg |