Audio Database


An all-silicon transistor pre-main amplifier created with the same design intent as the AU 111.

A C / E split phase inversion circuit is used for the output stage to realize an all-silicon transistor.
As a result, excellent high-frequency characteristics and linearity due to silicon transistors are obtained.

All amplifier circuits from the first stage to the final output stage are composed of NF amplifier, and frequency characteristics, distortion and SN are improved.

The tone control is a 2-stage NF type using a 3-dB-step attenuator.
In addition, the tone center provides a completely flat characteristic.

In order to prevent damage to the power transistor even if the output terminal is short-circuited, SANSUI's original pure electronic PSC (protection) circuit is adopted.
In addition, the AU 777 uses a double safety protection device that combines a power transistor with a quick fuse to ensure even greater safety.

The preamp section and power amplifier section can be used separately.
For this reason, it can be used as a multi-amplifier system by connecting a channel divider to the preamplifier jacks and adding a power amplifier.

It is equipped with two Phono input terminals, and Phono1 is designed for 47k Ω and Phono2 for 100k Ω.
Thus, it can be used depending on the load resistance of the cartridge.

Center channel output terminal is mounted, and 2 circuits of flat output and 200 Hz high-cut output are provided.

Equipped with a tape equalizer that can be switched according to the speed of the tape.

Equipped with CR feedback type low filter and high filter.

It is equipped with functions such as loudness control, tape monitor, presence switch, headphone jack and muting switch.

Model Rating
Solid-state pre-main amplifier
Power Amplifier Unit
Stereo effective output (both channel drive) 25W + 25W + / - 1 db
Effective power 30W/30W ± 1 db
Music power 70W + / - 1 db
Total harmonic distortion factor Not more than 0.5%
Intermodulation distortion factor (60 hz : 7 khz = 4 : 1) 0.8%
Power Band With (IHF, 0.5% distortion factor) 20 Hz to 50 kHz
Frequency characteristic 20 Hz ~ 100 kHz ± 1 dB (Normal Output)
Channel separation 50dB
Hum and noise (IHF, closed circuit) 100dB
Input sensitivity (effective output, 1 kHz) 1V
Input impedance 300k Ω
Load impedance 8 Ω ~ 16 Ω
Damping factor 24 (8 Ω)
Center channel output Flat Output : 9.5 V
High Cut Output : 1 V (fo = 200 Hz)
Presence 50 Hz, + 6 dB (fo = 125 Hz)
Preamplifier Section
Output voltage Maximum : 5 v
Rating : 1 v (180 Ω)
Total harmonic distortion factor 0.1% (Rated Output Voltage)
Frequency characteristic 20 Hz ~ 70 kHz + 0.5 dB ~ -1.5 dB
Hum and noise (IHF) Phono1, 2 : 80 dB (closed circuit)
Tape Head 19cm/sec : 85 dB (closed circuit)
AUX1, 2 : 85 dB (open circuit)
Input Sensitivity / Impedance (1 kHz) Phono1 : 2mV/47k Ω
Phono2 : 2mV/100k Ω
Tape Head 19cm/sec : 1.5mV/200k Ω
Tape Head 9.5cm/sec : 1.3mV/200k Ω
AUX1, 2, Tape Monitor : 140mV/100k Ω
Tape Rec Phono1, 2 : 37 dB (70 times the input)
Tape Head 19cm/sec : 39 dB (90 times the input)
Tape Head 9.5cm/sec : 41 dB (110 times the input)
Tone control Bass : 20 Hz ± 15 dB (in 3 dB steps)
Treble : 20 kHz ± 15 dB (in 3 dB steps)
Loudness control (Volume-30dB) 50 Hz : + 8 dB, 10 kHz : + 5 dB
High filter 20 kHz, -22dB
Low filter 20 Hz, -21dB
Muting -20dB (20 Hz to 20 kHz)
Mode switch Stereo (Norm, Rev)
Mono (L, R)
Semiconductor used Transistor : 26 Nos.
Diode : 8 pcs
Thermistor : 4
S. C. R : 1 Piece
Power supply voltage AC100V/117V/220V/240V, 50Hz/60Hz
Power consumption Maximum : 165 VA (240 VAC, 50Hz/60Hz)
External dimensions Width 435x Height 155x Depth 334 mm
Weight 12.3kg
Sold Separately Wooden case (¥ 4,150)