¥ 28,700 (released in June 1968)
An all-silicon transistor pre-main amplifier that uses the same silicon power transistor as the AU 555.
Silicon transistors are used in all stages, such as epitaxial silicon transistors for power transistors and specially selected low-noise silicon transistors for equalizer circuits.
As a result, distortion and S/N ratio at low output power are small, and combined with high output power, dynamic range is large.
The SEPP-ITL-OTL system of the complimentary service Darlington circuit is used for the circuit system of the power amplifier section.
All amplifier circuits from the first stage to the final output stage are composed of NF amplifiers.
The protection circuit employs a power limiter method in which a signal higher than the drive voltage required for maximum output is not applied to the power transistor, and a short-cut fuse.
The two Phono input terminals are designed to have different impedances for Phono1 and Phono2, and can be used according to the specified additional resistance of the cartridge and the preference of tone color.
The transformer employs a power transformer for transistor amplifiers designed to take advantage of SANSUI's transformer technology.
Accessories such as high and low filters, a loudness control, a DIN connector, a tape monitor circuit and a headphone jack are incorporated.
|Type||Solid state pre-main amplifier|
|Harmonic distortion factor||Not more than 0.8%|
|Intermodulation distortion factor (60 hz : 7 khz = 4 : 1)||Not more than 0.8%|
|Power Band With (IHF)||20 Hz ~ 20000 Hz (8 Ω)|
|Frequency characteristic||20 Hz to 30 kHz ± 1 dB|
|Channel separation||50 dB or more|
|Output impedance||4 Ω ~ 16 Ω|
|Damping factor||20 or More (8 Ω)|
|Hum and noise (IHF)||Residual noise : 80 dB or more
Phono : 60 dB or more
AUX : 65 dB or more
|Input Sensitivity / Impedance (Rated Output)||Phono1 : 2 mV ± 3dB/47k Ω
Phono2 : 2 mV ± 3dB/100k Ω
Tape Head (19cm/s) : 1.5mV/200k Ω
AUX1, 2 : 150 mv ± 3dB/100k Ω
Tape Monitor : 150 mv ± 3dB/40k Ω
|Tone control||Bass : 50 Hz, ± 10 dB
Treble : 10 kHz, + 12 dB to -14dB
|Loudness control (Volume-30dB)||50 Hz : + 8 dB, 10 kHz : + 3 dB|
|Semiconductor used||Transistor : 18 Nos.
Diode : 6 pcs
|Power supply voltage||AC100V/117V/220V/240V, 50Hz/60Hz|
|Power consumption||100 VA (Maximum Output)|
|External dimensions||Width 292x Height 111x Depth 267 mm|