
Marantz PM-88SE |
90,000yen(1990 release) |
The Integrated Amplifier developed as a special
edition of PM-80.
Based on the thought power-source", the basics of "amplifier has adopted the toroidal transformer as a power-source part.
A regulation (current-supply-source capacity) is good, and since there are few natural oscillations, it is the optimal as a transformer of amplifier.
Furthermore, the custom-made mass electrolytic capacitor is carried.
Moreover, the OFC line was used for a speaker circuitry, a power cord, and
also internal-wiring material, and the fluence of a smooth electric current is
secured.
Furthermore, the powerful noise-killer element was carried as a
measure against a rectification noise which has on a tone quality also in a very
slight quantity, the RF noise produced at the time of a rectification was
absorbed, and the tone quality without muddiness is realized.
A power
amplifier part uses the power transistor of Pc(collector loss)100W by a parallel
push pull, and the gain is raised by making circuitry into a three-step
Darlington connection.
Moreover, in PM-88SE, the pure class A amplification of 20 W/ch (8ohms)
output is adopted. By the class-AB-amplification scheme which shares the
positive [ of a signal ], and negative side with a separate transistor,
switching distortion occurred at the moment of turning on electricity/shutdown
of the transistor at the time of a music signal changing from the positive
side to the negative side. In class A amplification, in order to amplify
the full wave form of a signal with the same transistor, turning on electricity/a
shutdown like class AB amplification do not take place, but the occurrence
of switching distortion is suppressed.
Moreover, when big power
is required, switching to class AB amplification is also possible.
The
shielding board of OFC which fixes a power transistor reduces the unnecessary
radiation generated from a transistor.
The phone equalizer part has
given careful consideration, in order to constitute the low-noise amplifier
which combined low-noise FET and IC for audios and to transmit the signal of an
analog disk with small level faithfully.
Moreover, the influence of the
curvature of an analog disk is suppressed by attenuating 30Hz super-low-pass
one.
Fine attention is paid to the selection of a part, such as adopting as
a coupling capacitor the paper polyesters substrate which was excellent in the
printed circuit board in the electrolytic capacitor of the silk separator at
vibration suppression nature besides this.
By adoption of sub-
die-casting, the case has protected each circuitry from the oscillation from the
interior and the outside, and has eliminated the influence by oscillation with
other vibration proof parts.
The chassis is carrying out the copper plating
treatment of the overall, and the RF has prevented jumping into other
circuitries and elements.
Furthermore, by adoption of the vibration proof
top cover of 3mm thickness, an oscillation of the amplifier itself is suppressed
and the oscillation from the outside is also reduced.
The volume and the
selector are using the knob of an aluminum Naked.
Reducing the influence by
a volume shaft vibrating greatly, a volume knob in particular is fixing the
volume itself firmly with the large-sized washer rather than only attaches the
knob of a Naked.
One phone (man month/MC switching), four lines, and
three tapes input/outputs have equipped the input.
Moreover, one processor
input/output terminal is also equipped.
The speaker termination is equipped
with two terminations corresponding to a banana plug.
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Form |
Stereo Integrated Amplifier
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Output power (20Hz - 20kHz, both channel drive) |
At the time of Class AB : |
100W+100W (8ohms)
120W+120W (6ohms)
140W+140W (4ohms) |
Class A:00 : |
20W+20W (8ohms)
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Dynamic power |
At the time of Class AB : |
170W+170W (6ohms)
220W+220W (4ohms)
340W+340W (2ohms) |
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THD (20Hz - 20kHz, 8-ohm load intensity)
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0.008% |
Cross modulation distortion (SMPTE)
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0.008% |
Output bandwidth (an 8-ohm load intensity,
THD 0.03%) |
10Hz - 50kHz |
Frequency characteristic (compact disk and
Source Direct) |
10Hz - 100kHz, and +0 -3 dB
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Dumping factor |
180 (an 8-ohm load intensity, 20Hz - 10kHz)
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Input sensitivity/input impedance
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Phono MC: 250 microvolts/100 ohms
Phono
man month: 2.5mV/47kohm
High SFT Level: 150mV/33kohm |
Phono maximum permissible input (1kHz)
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MC:16mV
MM:160mV |
RIAA deflection (20Hz - 20kHz) |
±0.2dB |
S/N ratio (A network) |
Phono MC:75dB
Phono MM:85dB
High
Level:107dB |
Supply voltage |
audio-video100V, 50Hz/60Hz |
Power consumption |
220W (Electrical Appliance and Material
Control Law) |
Dimensions |
Width 454x height 165x depth of 380mm
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Weight |
17.5kg |
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