Audio Database


Marantz PM-88SE 90,000yen(1990 release)

The Integrated Amplifier developed as a special edition of PM-80.

Based on the thought power-source", the basics of "amplifier has adopted the toroidal transformer as a power-source part.
A regulation (current-supply-source capacity) is good, and since there are few natural oscillations, it is the optimal as a transformer of amplifier.
Furthermore, the custom-made mass electrolytic capacitor is carried.
Moreover, the OFC line was used for a speaker circuitry, a power cord, and also internal-wiring material, and the fluence of a smooth electric current is secured.
Furthermore, the powerful noise-killer element was carried as a measure against a rectification noise which has on a tone quality also in a very slight quantity, the RF noise produced at the time of a rectification was absorbed, and the tone quality without muddiness is realized.

A power amplifier part uses the power transistor of Pc(collector loss)100W by a parallel push pull, and the gain is raised by making circuitry into a three-step Darlington connection.
Moreover, in PM-88SE, the pure class A amplification of 20 W/ch (8ohms) output is adopted. By the class-AB-amplification scheme which shares the positive [ of a signal ], and negative side with a separate transistor, switching distortion occurred at the moment of turning on electricity/shutdown of the transistor at the time of a music signal changing from the positive side to the negative side. In class A amplification, in order to amplify the full wave form of a signal with the same transistor, turning on electricity/a shutdown like class AB amplification do not take place, but the occurrence of switching distortion is suppressed.
Moreover, when big power is required, switching to class AB amplification is also possible.
The shielding board of OFC which fixes a power transistor reduces the unnecessary radiation generated from a transistor.

The phone equalizer part has given careful consideration, in order to constitute the low-noise amplifier which combined low-noise FET and IC for audios and to transmit the signal of an analog disk with small level faithfully.
Moreover, the influence of the curvature of an analog disk is suppressed by attenuating 30Hz super-low-pass one.
Fine attention is paid to the selection of a part, such as adopting as a coupling capacitor the paper polyesters substrate which was excellent in the printed circuit board in the electrolytic capacitor of the silk separator at vibration suppression nature besides this.

By adoption of sub- die-casting, the case has protected each circuitry from the oscillation from the interior and the outside, and has eliminated the influence by oscillation with other vibration proof parts.
The chassis is carrying out the copper plating treatment of the overall, and the RF has prevented jumping into other circuitries and elements.
Furthermore, by adoption of the vibration proof top cover of 3mm thickness, an oscillation of the amplifier itself is suppressed and the oscillation from the outside is also reduced.

The volume and the selector are using the knob of an aluminum Naked.
Reducing the influence by a volume shaft vibrating greatly, a volume knob in particular is fixing the volume itself firmly with the large-sized washer rather than only attaches the knob of a Naked.

One phone (man month/MC switching), four lines, and three tapes input/outputs have equipped the input.
Moreover, one processor input/output terminal is also equipped.
The speaker termination is equipped with two terminations corresponding to a banana plug.

Internal Power-source
The Power Transistor

Rating of a mode
Form Stereo Integrated Amplifier
Output power (20Hz - 20kHz, both channel drive)
At the time of Class AB : 100W+100W (8ohms)
120W+120W (6ohms)
140W+140W (4ohms)
Class A:00 : 20W+20W (8ohms)
Dynamic power
At the time of Class AB : 170W+170W (6ohms)
220W+220W (4ohms)
340W+340W (2ohms)
THD (20Hz - 20kHz, 8-ohm load intensity) 0.008%
Cross modulation distortion (SMPTE) 0.008%
Output bandwidth (an 8-ohm load intensity, THD 0.03%) 10Hz - 50kHz
Frequency characteristic (compact disk and Source Direct) 10Hz - 100kHz, and +0 -3 dB
Dumping factor 180 (an 8-ohm load intensity, 20Hz - 10kHz)
Input sensitivity/input impedance Phono MC: 250 microvolts/100 ohms
Phono man month: 2.5mV/47kohm
High SFT Level: 150mV/33kohm
Phono maximum permissible input (1kHz) MC:16mV
RIAA deflection (20Hz - 20kHz) ±0.2dB
S/N ratio (A network) Phono MC:75dB
Phono MM:85dB
High Level:107dB
Supply voltage audio-video100V, 50Hz/60Hz
Power consumption 220W (Electrical Appliance and Material Control Law)
Dimensions Width 454x height 165x depth of 380mm
Weight 17.5kg