|100,000yen(around the 1996 time)
The Integrated Amplifier which inherited the design philosophy of high-end audio
S1 series, and technology.
A large current type magnification element
UHC MOS called peak current 120A is adopted as an output stage.
supply capacity has been improved a bipolar transistor and more than equivalent, and UHC MOS is the prevention which also unites and has a sound quality merit of
MOS FET, carried this UHC MOS with single push pull composition, and has
canceled the variation in magnification operation.
The twin transformer
parallel connection which improves sharply the characteristic of each magnetic
circuit and winding wire circuit developed by monophonic power amplifier POA-S1
Moreover, by considering influence of magnetic etc. as L
canceled mutually and C mount, the leakage flux of the power transformer which
is a noise source in amplifier was reduced, and high current supply capability
and low-noise-ization are realized.
The large-sized rectification diode
excellent in large current supply capacity and the Hearst recovery diode which
has improved working speed sharply are connected to a rectifier circuit in
parallel, and a high speed and large current are supported so that better
operation can be obtained.
Furthermore, it carries in the power source
capacitor in which a direct-current power source is stored combining the film
capacitor with which a mass high-quality sound electrolytic capacitor differs
from a frequency response, and current supply stabilized in all the zones of
play frequency is enabled.
In order to cancel degradation of the sound
quality by the mutual intervention between circuits, or inflow of a noise, the
power amplifier block was considered as the twin monophonic composition which
achieved L/R independence, and also 6 block structures which also separated the
circuit where other signal levels differ are adopted.
This eliminated the
influence on the sound quality by the interference during each block, and the
more excellent play is realized.
Moreover, since the 1.6-mm-thick sheet
steel is used for a chassis in order to secure high rigidity, and also
deterrence of vibration is put into practice, it is a chassis which adds a
transformer base to a power transformer part, and has a tough structure of 3.2mm
it is brass shaving, and resembled the speaker terminal,
gilding processing was performed, and more reliable connection is made.
Moreover, two lines are prepared and bi-wiring is supported.
phone equalizer which adopted the first rank circuit of discrete composition of
having used low-noise FET is carried.
Both of the cartridges, MM and MC, can be used by the change of a switch.
Large-sized (27 type) volume was
begun and OFC internal wiring material, an inactive gas enclosure type relay,
high-quality sound carbon resistance, a high-quality sound condenser, etc. have adopted the reliable part.
|<Power amplifier part>
|Output power (both channel drive)
|160W+160W (4 ohms, 1kHz, THD 0.7%)
80W+80W (8 ohms, 20Hz - 20kHz, THD 0.07%)
||0.01% (Output-power-3dB o'clock, 1kHz,
|Speaker output terminal
||A, B:4ohms - 16ohms
Bi-wiring load: 4ohms - 16ohms
||Stereo headphone conformity
|Equalizer amplifier output
||Rec Out: 150mV of rating
||Phono MM: 2.5mV/47kohm
Line: 150mV/47kohm (Source-Direct-off)
|Signal to noise ratio (A network)
||Phono MM: 91dB (input terminal short circuit
and 5mV of incoming signal o'clock)
Phono MC: 76dB (input terminal short
circuit and 0.5mV of incoming signal o'clock)
CD, Tuner, DVD/Aux, Aux2,
Tape1/Tape2 [ DAT and ]/MD: 110dB (input terminal short circuit)
||Bass: 100Hz, ±8dB
Treble: 10kHz, ±8dB
||Switched (linkage): Two lines, the sum total
Unswitched (un-interlocking): One line, capacity 240W
|Power supply voltage
||Width 434x height 180x depth of 478mm