AGI Model 511

The

AGI Model 511

260,000 yen(around the 1978 time)
185,000 yen(around the 1979 time)
230,000 yen(around the 1980 time)

Description

Control amplifier which David Spiegel of AGI who tackled the subject of high-speed-izing of amplifier with an awareness of the issues announced as a concrete result of the research.

The high speed circuit which shows the numerical value of more than slew-rate 250v/microsec, [ less than Ries / fall time 0.01microsec ], and less than time delay 0.0035microsec,By realization of the ultra wideband width which amounts to 50MHz or more, phone amplifier begins TIM (transient intermodulation distortion), and is free completely from generating of slewing induced distortion.

The circuit device is added so that distortion by an inter-modulation may not arise in connection with the power amplifier which is not quick out of a transient response.
Moreover, the big ability to adapt over various conditions of a load side has been acquired by an output with a low Output load impedance and a margin.

The capacitor plug-in socket which enables a setup of the optimal load conditions over a phone cartridge is carried in the input side.

The TONE SEND function and the DUBBING switch are carried.

Setting all up is finished only using the superior parts of Military Specification. Moreover, all magnification elements are mounted by the plug-in system by the socket plated with gold.

The exterior uses the product made from stainless steel also for the setscrew of chassis covering.
Moreover, wooden cases are attached.

Rating of a mode

Form	Preamplifier
<Phone amplifier part>
Gain	33.0dB�}0.25dB (1kHz)
Input impedance	47kohm (90pF)
Maximum permissible input	160mV(1kHz)
Output load impedance	Rec out: 220ohms
Maximum-except-take-off level	7V/10kohm
Frequency response	RIAA deflection of less than �}0.25dB
Phase characteristic	+ 12 degrees-4 degrees (20Hz - 20kHz)
Signal to noise ratio	88dB or more (10mV, 1kHz, IHF-A)
Distortion (at the time of 5V/10kohm)	THD: 0.005% or less (usually 0.001% or less, 20Hz - 20kHz) IMD: 0.005% or less (usually 0.001% or less, the SMPTE method)
�ߓn characteristic	Slew rate: More than 250v/microsec Ries / fall time: Less than 0.01microsec (2 Vp-p) Time delay: Less than 0.0035microsec
<High-level amplifier part>
Gain	18.7dB�}0.25dB
Input impedance	38kohm
Output load impedance	47ohms
Maximum-except-take-off level	9.5V/10kohm 6V/600 ohm
Frequency response	20Hz-20kHz�}0.1dB
Phase characteristic	+ 1 degree-3 degrees (20Hz - 20kHz)
Distortion (at the time of 5V/10kohm)	THD: 0.005% or less (usually 0.001% or less, 20Hz - 20kHz) IMD: 0.005% or less (usually 0.001% or less, the SMPTE method)
�ߓn characteristic	Slew rate: More than 50v/microsec Ries / fall time: Less than 0.25microsec (10 Vp-p) Square-pulse dealt: 2% or less (20Hz, 1000-ohm load)
<Others>
Power source	AC100V (90V-111V), 50Hz/60Hz
Power consumption	5W
Dimensions	Width 354x height 132x depth of 243mm
Weight	About 6kg
Attachment	Wooden case