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| SANSUI AU-777 |
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| 57,700yen(May, 1967 release) |
The Integrated Amplifier which adopted the silicon
transistor.
C and E splitting type phase inversion circuitry were used
for the output stage, and all the silicon transistor-ization is realized.
Thereby, the outstanding high region property and linearity by a silicon
transistor have been obtained.
All the amplifying circuits from the
first rank to the final output stage are constituted from NF amplifier, and the
frequency characteristic, distortion, and SN are improved.
The two which
use attenuator of 3dB step step NF type is adopted as a tone control.
Moreover, a completely flat property is acquired in the tone center.
The pure electronic formula PSC (protection) circuitry original with an
SANSUI is adopted so that a power transistor may not be damaged, even when an
output-terminal short-circuits.
In AU-777, the double safety interlock which
secures a safeness more combining an immediate judgment fuse in a power
transistor further is adopted.
A preamplifier part and a power amplifier
part can be used separately.
For this reason, if channel dividers are
connected to a preamplifier output-terminal and power amplifier is added, it can
use also as a multi-amplifier system.
Two Phono input terminals are
carried, Phono1 is designed by 47kohms and Phono2 is designed by 100kohms.
Thereby, it can use properly by the load resistance of a cartridge etc.
The center channel output-terminal is carried and two circuitries of a
flat output and a 200Hz high cut output are prepared.
The tapes
equalizer which can be changed according to the speed of a tapes is carried.
The low filter and the high filter of CR feedback scheme are carried.
Functionalities, such as a loudness control, a tapes monitor, a presence
switchpoint, a headset jack, and a muting switch, are carried.
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| Form |
Solid-state Integrated Amplifier
|
| <Power amplifier part>
|
| Stereo effective output (both channel drive) |
25W+25W±1dB |
| Effective output |
30W/30W±1dB |
| Music power |
70W±1dB |
| THD |
0.5% or less |
| Cross modulation distortion (60Hz:7kHz=4:1)
|
0.8% |
| Power Band Width (IHF, 0.5% of distortion)
|
20Hz - 50kHz |
| Frequency characteristic |
20Hz-100kHz±1dB (at the time of a normal
output) |
| Channel separation |
50dB |
| A hum and a noise (IHF, closed circuit)
|
100dB |
| Input sensitivity (an effective output,
1kHz) |
1V |
| Input impedance |
300kohm |
| Load impedance |
8ohm-16ohm |
| Dumping factor |
24 (8ohms) |
| Center channel output |
Flat output: 9.5V
High cut output: 1V
(fo = 200Hz) |
| Presence |
50Hz, +6dB (fo = 125Hz) |
| <Preamplifier part>
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| Output voltage |
Maxima: 5V
Rate: 1V (180ohms)
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| THD |
0.1% (Output-power voltage)
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| Frequency characteristic |
20Hz-70kHz+0.5dB--1.5dB |
| A hum and a noise (IHF) |
Phono1, 2:80dB (closed circuit)
Tape
Head 19cm/sec: 85dB (closed circuit)
AUX1, 2:85dB (open circuit)
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| Input sensitivity/impedance (1kHz)
|
Phono1:2mV/47kohm
Phono2:2mV/100kohm
Tape Head 19cm/sec:1.5mV/200kohm
Tape Head 9.5cm/sec:1.3mV/200kohm
AUX1, 2, Tape Monitor:140mV /, 100kohm |
| Sound-recording output (Tape Rec)
|
Phono1, 2: It is 37dB (70 times) to an
input.
Tape Head 19cm/sec: It is 39dB (90 times) to an input.
Tape Head
9.5cm/sec: It is 41dB (110 times) to an input. |
| Tone control |
Bass: 20Hz±15dB (3dB step)
Treble:
20kHz±15dB (3dB step) |
| Loudness control (Volume-30dB) |
50Hz : +8dB, 10kHz : +5dB |
| A high filter |
20kHz-22dB |
| A low filter |
20Hz-21dB |
| Muting |
- 20dB (20Hz - 20kHz) |
| Mode switch |
Stereo (Norm, RX-Net Rev)
Mono (L, R)
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| <Synthesis>
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| The semiconductor used |
Transistor: 26 pieces
Diode: Eight
pieces
Thermistor: Four pieces
S. C.R: One piece |
| Supply voltage |
AC100V/117V/220V/240V, 50Hz/60Hz
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| Power consumption |
Maxima: 165VA (AC240V, 50Hz/60Hz)
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| Dimensions |
Width 435x height 155x depth of 334mm
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| Weight |
12.3kg |
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