Audio Database SANSUI AU-222 28,700yen(June, 1968 release) Description �@ The all silicon transistor Integrated Amplifier which adopted the same silicon power transistor as AU-555. The low-noise silicon transistor sorted out by especially the equalizer circuitry has adopted the silicon transistor as a whole page including using the epitaxial silicon transistor for a power transistor. For this reason, the interval has taken the large dynamic range as there are few distortion at the time of a low power output and S/Ns and they are the Oide power. The SEPP-ITL-OTL scheme of a complimentary darlington circuit is adopted as the circuit system of a power amplifier part. All the amplifying circuits from the first rank to the final output stage consist of NF amplifier. The power limiter scheme with which the signal more than the drive voltage which the maximum output takes is not added to a power transistor, and the immediate judgment fuse are used for a protection network. Two Phono input terminals serve as a design which differs in an impedance by Phono1 and Phono2, and can be properly used by liking of a specification append resistor of a cartridge and a tone. The power transformer for transistor amplifier which demonstrated the transformer technology of the SANSUI and was designed is adopted as a transformer. Accessories circuitries, such as a high filter, a low filter, a loudness control, a DIN connector, a tapes monitor circuitry, and a headset jack, are carried. Rating of a mode Form Solid-state Integrated Amplifier Output power Music power : 40W�}1dB (4ohm) 46W�}1dB (8ohm) Output power : 16W+16W�}1dB (4ohm) 18W+18W�}1dB (8ohm) THD 0.8% or less Cross modulation distortion (60Hz:7kHz=4:1) 0.8% or less Power Band Width (IHF) 20Hz - 20000Hz (8ohm) Frequency characteristic 20Hz-30kHz�}1dB Channel separation 50dB or more Output load impedance 4ohm-16ohm Dumping factor 20 (8ohm) or more A hum and a noise (IHF) Remains noise: 80dB or more Phono: 60dB or more AUX: 65dB or more Input sensitivity/impedance (Output power) Phono1:2mV�}3dB /, 47kohm Phono2:2mV�}3dB /, 100kohm Tape Head(19 cm/s): 1.5mV / 200kohm AUX1, 2:150mV�}3dB/100kohm Tape Monitor: 150mV�}3dB/40kohm Sound-recording output Pin:150mV Din:30mV Tone control Bass: 50Hz, �}10dB Treble: 10kHz, +12dB--14dB Loudness control (Volume-30dB) 50Hz : +8dB, 10kHz : +3dB A low filter 50Hz:-10dB A high filter 15kHz:-11dB The semiconductor used Transistor: 18 pieces Diode: Six pieces Supply voltage AC100V/117V/220V/240V, 50Hz/60Hz Power consumption 100VA (at the time of the maximum output) Dimensions Width 292x height 111x depth of 267mm Weight 5.8kg