SANSUI QRX-3000
¥ 99,800 (around 1973)
Commentary
A 4-channel receiver with built-in newly developed QS Barrio matrix circuit that supports all 4-channel systems.
The QS QS Barrio matrix circuit is incorporated in the QS synthesizer / decoder section.
The QS Barrio matrix circuit is composed of square matrices and phase shifters, etc., and emphasizes natural sound field generation while improving separation and sound quality.
In the newly developed QS Barrio matrix circuit, the matrix coefficient of the input signal is changed instantaneously to control the source so that the directivity becomes clearer, and the separation is improved. Theoretically, the QS Barrio matrix circuit can achieve infinite separation between each channel by selecting the control level of the matrix coefficient. However, from the viewpoint of music playback, it is adjusted to the optimum level of audibility. This control uses a phase discriminator that detects the phase of the input signal.
A 2-stage direct NF circuit is used for the equalizer amplifier in the amplifier section.
The tuner section uses a dual-gate MOS type FET and a precision 3-row varicon.
The IF section uses a ceramic filter with four elements and two stages and an IC to improve sensitivity and selectivity.
A constant voltage circuit is used for the power supply.
Equipped with a function switch for selecting 4-channel effects.
Equipped with various 4-channel control functions.
The headphone jack can be used on the front and rear separately.
24. QS Synthesizer / Decoder 27. Power supply unit 30. Tone Control 33. Low / High Filter 36. Tuning knob between FM/AM tuning channels 39. Tape monitor switch |
25. Amplifier section 28. Power Switch 31. balance control 34. Function Switches 37. Loudness Switch |
26. Tuner Section 29. Headphone Jack 32. Volume Switch 35. Selector switch 38. FM Muting |
Model Rating
Type | 4-channel receiver |
Synthesizer Unit | |
Synthesizer / decoder | Sansui QS Regular Matrix Circuit (built-in QS Barrio matrix circuit) |
Pre-Main Amplifier Section | |
Music power (IHF, 1 kHz) | 100W (4 Ω) |
Effective power | 15W/15W/15W/15W / 15 w (8 Ω, each channel operation, 1 kHz) 8W + 8W + 8W + 8W + 8W (8 ohm, 4 ch operation, 20 hz to 20 khz) |
Total harmonic distortion factor (at rated output) | Not more than 0.5% |
Intermodulation distortion factor (at rated output) | 0.5% or Less (70 Hz : 7 kHz = 4 : 1 SMPTE) |
Power Band With (IHF) | 20 Hz to 30 kHz |
Frequency characteristic | 30 Hz to 30 kHz |
Input Sensitivity / Impedance | Phono : 2.5mV/50k Ω (1 kHz at rated output) |
Phono maximum allowable input | 100 mV (total harmonic distortion rate 0.5% or less) |
Hum and noise (IHF) | Phono : 70 dB or more |
FM Tuner Section | |
Sensitivity (IHF) | 2.5 μ V |
Selectivity | 50 dB or more |
Total harmonic distortion factor | mono:0.5% stereo:0.8% |
Signal-to-noise ratio | Mono : 60 dB or more |
Stereo separation | 35 dB or More (1 kHz) |
Capture Ratio (IHF) | 2.5 dB or less |
Image rejection | 45 dB or more |
<AM Tuner Section> | |
Sensitivity | 50dB/m (bar antenna) |
Selectivity | 25 dB or more |
<General> | |
Semiconductor used | Transistor : 88 Diode : 50 pcs FET : 3 IC : 1 Zener diode : 1 unit |
Power consumption | 62W (rated) 110 VA (max) |
External dimensions | Width 505x Height 140x Depth 330 mm |
Weight | 11.5kg |